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MITSUBISHI Nch POWER MOSFET
FS50SMJ-2
HIGH-SPEED SWITCHING USE
FS50SMJ-2
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5 r
5.0
f 3.2
2
2
19.5MIN.
4
20.0
4.4
G
0.6 2.8
1.0 q 5.45 w e 5.45
4 wr
4V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 48m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 90ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 20 50 200 50 50 200 70 -55 ~ +150 -55 ~ +150 4.8
Unit V V A A A A A W C C g
Feb.1999
L = 50H
MITSUBISHI Nch POWER MOSFET
FS50SMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 37 40 0.93 40 3000 410 210 22 65 270 160 1.0 -- 90 Max. -- 0.1 0.1 2.0 48 52 1.20 -- -- -- -- -- -- -- -- 1.5 1.78 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3
TC = 25C Single Pulse DC
80
tw = 10ms 100ms
60
40
1ms 10ms 100ms
20
0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V TC = 25C Pulse Test 4V
50
VGS = 10V
5V 3.5V
TC = 25C Pulse Test
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
3V
60
30
40
3V
20
PD = 70W
20
PD = 70W
10
2.5V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25C Pulse Test
4
80
3
ID = 80A
60
VGS = 4V 10V
2
50A
40
1
20A
20 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
TC = 25C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
80
60
75C 125C
40
20
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
tf Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50
104 VGS = 0V
CAPACITANCE Ciss, Coss, Crss (pF)
Ciss
103 7 5 3 2 102 7 5 3 2
SWITCHING TIME (ns)
7 f = 1MHZ 5 3 2
td(off)
Coss Crss
102 7 5 4 3 2
tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101
100
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
Tch = 25C ID = 50A
8
80
6
60
4
VDS = 20V 40V 80V
40
TC = 125C 75C 25C
2
20
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10-1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)

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